Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers

RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V.

dc.contributor.author	RADAUTSAN, S. I.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	PYSHNAYA, N. B.
dc.contributor.author	URSAKI, V. V.
dc.date.accessioned	2020-11-19T10:22:17Z
dc.date.available	2020-11-19T10:22:17Z
dc.date.issued	1994
dc.identifier.citation	RADAUTSAN, S. I., TIGINYANU, I. M., PYSHNAYA, N. B.et al. Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers. In: Acta Physica Hungarica. 1994, V. 74, Iss. 1, pp. 161-165. ISSN 0021-4922.	en_US
dc.identifier.uri	https://doi.org/10.1007/BF03055248
dc.identifier.uri	http://repository.utm.md/handle/5014/11566
dc.description	Access full text - https://link.springer.com/article/10.1007/BF03055248	en_US
dc.description.abstract	Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of the conductivity compensation degree with the dose of electron irradiation has been observed, which proves to be connected with the intensive formation of deep (Ec-0.4 eV) radiation donor-type defects.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer Nature Switzerland	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	photoluminescence spectra	en_US
dc.subject	excitons	en_US
dc.subject	electron irradiation	en_US
dc.title	Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers	en_US
dc.type	Article	en_US