Temperature dependence of the photoluminescence spectra in AgGaS2

RICCI, P. C.; ANEDDA, A.; CORPINO, R.; CARBONARO, C. M.; MARCEDDU, M.; TIGINYANU, I. M.; URSAKI, V. V.

dc.contributor.author	RICCI, P. C.
dc.contributor.author	ANEDDA, A.
dc.contributor.author	CORPINO, R.
dc.contributor.author	CARBONARO, C. M.
dc.contributor.author	MARCEDDU, M.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	URSAKI, V. V.
dc.date.accessioned	2020-11-17T09:43:56Z
dc.date.available	2020-11-17T09:43:56Z
dc.date.issued	2005
dc.identifier.citation	RICCI, P. C., ANEDDA, A., CORPINO, R. et al. Temperature dependence of the photoluminescence spectra in AgGaS2. In: Journal of Physics and Chemistry of Solids, 2005, V. 66, Nr. 11, pp. 1950-1953. ISSN 0022-3697.	en_US
dc.identifier.uri	https://doi.org/10.1016/j.jpcs.2005.09.034
dc.identifier.uri	http://repository.utm.md/handle/5014/11526
dc.description	Access full text - https://doi.org/10.1016/j.jpcs.2005.09.034	en_US
dc.description.abstract	The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7eV) whose photoluminescence properties are characterized by excitons and donor–acceptor pairs recombinations. We have performed photoluminescence (PL) measurement exciting with the third harmonic (3.5eV) of a Nd:YAG laser from room temperature down to 10K at different excitation power. In this work we report the dependence of the ‘green band’ on the excitation power at various temperatures.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductors	en_US
dc.subject	silver gallium sulfide	en_US
dc.title	Temperature dependence of the photoluminescence spectra in AgGaS2	en_US
dc.type	Article	en_US