Surface-related phonon mode in porous GaP

TIGINYANU, I. M.; URSAKI, V. V.; KARAVANSKII, V. A.; SOKOLOV, V. N.; RAPTIS, Y. S.; ANASTASSAKIS, E.

dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	KARAVANSKII, V. A.
dc.contributor.author	SOKOLOV, V. N.
dc.contributor.author	RAPTIS, Y. S.
dc.contributor.author	ANASTASSAKIS, E.
dc.date.accessioned	2020-11-10T12:08:54Z
dc.date.available	2020-11-10T12:08:54Z
dc.date.issued	1996
dc.identifier.citation	TIGINYANU, I. M, URSAKI, V. V., KARAVANSKII, V. A. et al. Surface-related phonon mode in porous GaP. In: Solid State Communications, 1996, V. 97, Nr. 8, pp. 675 - 678. ISSN ‎0038-1098.	en_US
dc.identifier.uri	https://doi.org/10.1016/0038-1098(95)00677-X
dc.identifier.uri	http://repository.utm.md/handle/5014/11284
dc.description	Access full text - https://doi.org/10.1016/0038-1098(95)00677-X	en_US
dc.description.abstract	Porous GaP layers prepared by electrochemical anodization of (1 0 0) and (1 1 1) A-oriented n-GaP crystalline substrates in HF solution have been studied by Raman spectroscopy. A surface vibrational mode at 397 cm−1 was observed in porous GaP. The process of anodization results in downward shifts of the TO and LO phonon frequencies, which are attributed to phonon confinement in crystalline GaP particles of nanometer size.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductors	en_US
dc.subject	nanostructures	en_US
dc.subject	phonons	en_US
dc.subject	light scattering	en_US
dc.title	Surface-related phonon mode in porous GaP	en_US
dc.type	Article	en_US