IRTUM – Institutional Repository of the Technical University of Moldova
Design of trapped surface charge for the photoelectrochemical fabrication of GaN mesostructures
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| dc.contributor.author | POPA, V. | |
| dc.contributor.author | VOLCIUC, O. | |
| dc.contributor.author | TIGINYANU, I. M. | |
| dc.date.accessioned | 2020-11-09T12:20:46Z | |
| dc.date.available | 2020-11-09T12:20:46Z | |
| dc.date.issued | 2004 | |
| dc.identifier.citation | POPA, V., VOLCIUC, O., TIGINYANU, I. M.. Design of trapped surface charge for the photoelectrochemical fabrication of GaN mesostructures. In: Physica Status Solidi (a), 2004, V. 201, Nr. 14, pp. R111-R113. ISSN 1862-6319. | en_US |
| dc.identifier.uri | https://doi.org/10.1002/pssa.200409071 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/11240 | |
| dc.description | Access full text - https://doi.org/10.1002/pssa.200409071 | en_US |
| dc.description.abstract | In this note we demonstrate that artificially introduced surface defects in GaN epilayers are stable against photoelectrochemical etching in aqueous solution of KOH. The origin of this stability is attributed to the negative charge trapped by the surface defects. Using 2 keV Ar ion treatment, we show that the pattern of surface defects and related trapped charge can be efficiently designed for the purpose of manufacturing GaN mesostructures. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
| dc.subject | surface defects | en_US |
| dc.subject | defects | en_US |
| dc.subject | epilayers | en_US |
| dc.subject | photoelectrochemical etching | en_US |
| dc.title | Design of trapped surface charge for the photoelectrochemical fabrication of GaN mesostructures | en_US |
| dc.type | Article | en_US |
