Electrochemistry-based maskless nanofabrication

Abstract

A review of technological approaches for 2D and 3D nanostructuring of semiconductor compounds by using radiation treatment and electrochemical etching is presented. We demonstrate novel spatial nanoarchitectures based on III-V and IIVI compounds as well as two-dimensional metallodielectric structures realized in different geometries. It is shown that photoelectrochemical etching of GaN combined with preliminary low-dose low-energy focused-ion-beam treatment of the sample surface allows one to fabricate in a controlled fashion arrays of nanowires and nanowalls as well as ultrathin membranes and supporting nanocolumns in the same technological route. Possible electronic and photonic applications of the elaborated nanostructures are discussed.