Characterization of p-NiO/n-Si heterojunctions prepared by spin coating method

MORARI, Vadim; ZALAMAI, Victor; RUSU, Emil; MONAICO, Eduard; URSAKI, Veacheslav; NIELSCH, Kornelius; TIGINYANU, Ion

dc.contributor.author	MORARI, Vadim
dc.contributor.author	ZALAMAI, Victor
dc.contributor.author	RUSU, Emil
dc.contributor.author	MONAICO, Eduard
dc.contributor.author	URSAKI, Veacheslav
dc.contributor.author	NIELSCH, Kornelius
dc.contributor.author	TIGINYANU, Ion
dc.date.accessioned	2020-10-29T14:55:28Z
dc.date.available	2020-10-29T14:55:28Z
dc.date.issued	2019
dc.identifier.citation	MORARI, Vadim, ZALAMAI, Victor, RUSU, Emil et al. Characterization of p-NiO/n-Si heterojunctions prepared by spin coating method. In: NANO-2019: Limits of Nanoscience and Nanotechnologies: proc. SPINTECH Summer school “S/F Hybrid Structures for Spintronics”, 24-27 Sept. 2019. Chişinău, 2019, pp. 91.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/10954
dc.description.abstract	In this paper, we present results on preparation of NiO thin films by spin-coating method. The films have been deposited on n-Si (100) substrates from 0.35 M aqueous solution of nickel chloride - NiCl2 6H2 O or nickel acetate - Ni(ac)24H2 O dissolved in 20 mL of 2-methoxyethanol + 0.5 mL of diethanolamine (DEA) as a stabilizer. The analysis of optical absorption spectra plotted in (αhυ)2 = f(hυ) coordinates for films deposited on silica substrates revealed a direct bandgap value of around 3.66 eV for p-NiO films.	en_US
dc.language.iso	en	en_US
dc.publisher	Academia de Ştiinţe a Moldovei	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thin films	en_US
dc.subject	spin-coating	en_US
dc.title	Characterization of p-NiO/n-Si heterojunctions prepared by spin coating method	en_US
dc.type	Article	en_US