Polarized Retroreflection from Nanoporous III–V Semiconductors

PRISLOPSKI, S. Ya.; GAPONENKO, S. V.; MONAICO, E.; SERGENTU, V. V.; TIGINYANU, I. M.

dc.contributor.author	PRISLOPSKI, S. Ya.
dc.contributor.author	GAPONENKO, S. V.
dc.contributor.author	MONAICO, E.
dc.contributor.author	SERGENTU, V. V.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-10-27T13:25:16Z
dc.date.available	2020-10-27T13:25:16Z
dc.date.issued	2018
dc.identifier.citation	PRISLOPSKI, S. Ya., GAPONENKO, S. V., MONAICO, E.et al. Polarized Retroreflection from Nanoporous III–V Semiconductors. In: Semiconductors. 2018, V. 52, Iss. 16 p. 2068-2069. ISSN 1090-6479.	en_US
dc.identifier.uri	https://doi.org/10.1134/S1063782618160248
dc.identifier.uri	http://repository.utm.md/handle/5014/10910
dc.description	Access full text - https://doi.org/10.1134/S1063782618160248	en_US
dc.description.abstract	Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we assume that coherent backscattering is the underlying physical mechanism of this phenomenon.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer Nature Switzerland	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	retroreflected light	en_US
dc.subject	linear polarization	en_US
dc.subject	nanoporous semiconductors	en_US
dc.subject	semiconductors	en_US
dc.title	Polarized Retroreflection from Nanoporous III–V Semiconductors	en_US
dc.type	Article	en_US