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Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds

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dc.contributor.author TIGINYANU, I. M.
dc.contributor.author LANGA, S.
dc.contributor.author CHRISTOPHERSEN, M.
dc.contributor.author CARSTENSEN, J.
dc.contributor.author SERGENTU, V.
dc.contributor.author FOCA, E.
dc.contributor.author RIOS, O.
dc.contributor.author FÖLL, H.
dc.date.accessioned 2020-10-26T14:45:27Z
dc.date.available 2020-10-26T14:45:27Z
dc.date.issued 2001
dc.identifier.citation TIGINYANU, I. M., LANGA, S. CHRISTOPHERSEN, M.et al. Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds. In: MRS Proceedings. 2001, V. 692, p. K2.7.1. ISSN 02729172. en_US
dc.identifier.uri https://doi.org/10.1557/PROC-692-K2.7.1
dc.identifier.uri http://repository.utm.md/handle/5014/10897
dc.description Access full text - https://doi.org/10.1557/PROC-692-K2.7.1 en_US
dc.description.abstract Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds (GaAs, InP, GaP) by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore arrays in InP are reported for the first time. We show that the reflectance from nanostructured InP is lower than that from bulk InP in the spectral interval 1.5-2.2 eV. The artificial anisotropy induced by nanotexturization was studied in porous GaP membranes and the refractive indices for ordinary and extraordinary beams were evaluated. en_US
dc.language.iso en en_US
dc.publisher Cambridge University Press en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject porous layers en_US
dc.subject porous membranes en_US
dc.subject membranes en_US
dc.subject layers en_US
dc.subject dielectric structures en_US
dc.subject electrochemical etching en_US
dc.subject nanopores en_US
dc.title Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds en_US
dc.type Article en_US


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