Memristive GaN ultrathin suspended membrane array

DRAGOMAN, Mircea; TIGINYANU, Ion; DRAGOMAN, Daniela; BRANISTE, Tudor; CIOBANU, Vladimir

dc.contributor.author	DRAGOMAN, Mircea
dc.contributor.author	TIGINYANU, Ion
dc.contributor.author	DRAGOMAN, Daniela
dc.contributor.author	BRANISTE, Tudor
dc.contributor.author	CIOBANU, Vladimir
dc.date.accessioned	2020-10-19T12:37:52Z
dc.date.available	2020-10-19T12:37:52Z
dc.date.issued	2016
dc.identifier.citation	DRAGOMAN, Mircea, TIGINYANU, Ion, DRAGOMAN, Daniela et al. Memristive GaN ultrathin suspended membrane array. In: Nanotechnology. 2016, V. 27, Nr. 29, pp. 295204. ISSN 0957-4484 (print) 1361-6528 (web).	en_US
dc.identifier.uri	https://doi.org/10.1088/0957-4484/27/29/295204
dc.identifier.uri	http://repository.utm.md/handle/5014/10805
dc.description.abstract	We show that ultrathin GaN membranes, with a thickness of 15 nm and planar dimensions of 12 × 184 μm2, act as memristive devices. The memristive behavior is due to the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of seconds and varies with the current or voltage sweep.	en_US
dc.language.iso	en	en_US
dc.publisher	IOP Publishing	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	ultrathin membranes	en_US
dc.subject	membranes	en_US
dc.subject	memristive devices	en_US
dc.title	Memristive GaN ultrathin suspended membrane array	en_US
dc.type	Article	en_US