Porosity-induced blueshift of photoluminescence in CdSe

MONAICO, E.; URSAKI, V. V.; TIGINYANU, I. M.

dc.contributor.author	MONAICO, E.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-10-16T07:15:59Z
dc.date.available	2020-10-16T07:15:59Z
dc.date.issued	2006
dc.identifier.citation	MONAICO, E., URSAKI, V. V., TIGINYANU, I. M. Porosity-induced blueshift of photoluminescence in CdSe. In: Journal of Applied Physics. 2006, V. 100, Iss. 5, pp. 053517. ISSN ‎0021-8979 (print); 1089-7550 (web).	en_US
dc.identifier.uri	https://doi.org/10.1063/1.2338833
dc.identifier.uri	http://repository.utm.md/handle/5014/10735
dc.description	Access full text - https://doi.org/10.1063/1.2338833	en_US
dc.description.abstract	Porous CdSe layers have been fabricated by anodic etching of n-type single crystalline substrates with different values of conductivity. The morphology and porosity of the layers thus produced were found to be controlled by the conductivity of the material, anodization voltage, and conditions of in situ UV illumination. The porosity-induced changes in the photoluminescence spectra were studied. The decrease of the skeleton size down to 10–20 nm was found to result in a blueshift of the excitonic emission lines by 10 meV which was attributed to quantum-size effects in the nanocrystalline CdSe porous skeleton. An increase of the exciton–LO-phonon interaction by a factor of 1.5 in a weak-to-intermediate confinement regime was deduced from the analysis of temperature dependence of the free exciton luminescence line.	en_US
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	porous layers	en_US
dc.subject	anodic etching	en_US
dc.subject	single crystalline substrates	en_US
dc.title	Porosity-induced blueshift of photoluminescence in CdSe	en_US
dc.type	Article	en_US