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Enhanced radiation hardness of ZnO nanorods versus bulk layers

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dc.contributor.author BURLACU, A.
dc.contributor.author URSAKI, V. V.
dc.contributor.author LINCOT, D.
dc.contributor.author SKURATOV, V. A.
dc.contributor.author PAUPORTE, T.
dc.contributor.author RUSU, E.
dc.contributor.author TIGINYANU, I. M.
dc.date.accessioned 2020-10-12T10:32:05Z
dc.date.available 2020-10-12T10:32:05Z
dc.date.issued 2008
dc.identifier.citation BURLACU, A. URSAKI, V. V. LINCOT, D. et al. Enhanced radiation hardness of ZnO nanorods versus bulk layers. In: Physica Status Solidi (RRL) – Rapid Research Letters, V. 2, Nr. 2, pp. 68-70. ISSN 1862-6254. Online ISSN 1862-6270. en_US
dc.identifier.uri https://doi.org/10.1002/pssr.200701318
dc.identifier.uri http://repository.utm.md/handle/5014/10657
dc.description Access full text - https://doi.org/10.1002/pssr.200701318 en_US
dc.description.abstract It is shown that ZnO nanorods grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe+23 irradiation at a dose of 1.5 × 1014 cm–2 in ZnO nanorods is nearly identical to that induced by a dose of 6 × 1012 cm–2 in bulk layers. The change in the nature of electronic transitions responsible for luminescence occurs at an irradiation dose around 1 × 1014 cm–2 and 5 × 1012 cm–2 in nanorods and bulk layers, respectively. High energy heavy ion irradiation followed by thermal annealing is also effective on the quality of ZnO nanorods grown by electrodeposition. en_US
dc.language.iso en en_US
dc.publisher WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject nanorods en_US
dc.subject luminescence en_US
dc.title Enhanced radiation hardness of ZnO nanorods versus bulk layers en_US
dc.type Article en_US


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