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Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure

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dc.contributor.author GOMIS, O.
dc.contributor.author SANTAMARÍA-PÉREZ, D.
dc.contributor.author VILAPLANA, R.
dc.contributor.author LUNA, R.
dc.contributor.author SANS, J. A.
dc.contributor.author MANJÓN, F. J.
dc.contributor.author ERRANDONEA, D.
dc.contributor.author PÉREZ-GONZÁLEZ, E.
dc.contributor.author RODRÍGUEZ-HERNÁNDEZ, P.
dc.contributor.author MUÑOZ, A.
dc.contributor.author TIGINYANU, I. M.
dc.contributor.author URSAKI, V. V.
dc.date.accessioned 2020-10-09T09:00:23Z
dc.date.available 2020-10-09T09:00:23Z
dc.date.issued 2014
dc.identifier.citation GOMIS, O., SANTAMARÍA-PÉREZ, D., VILAPLANA, R. et al. Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure. In: Journal of Alloys and Compounds. 2014, V. 583, pp. 70 - 78. ISSN 0925-8388. en_US
dc.identifier.uri https://doi.org/10.1016/j.jallcom.2013.08.123
dc.identifier.uri http://repository.utm.md/handle/5014/10611
dc.description Access full text - https://doi.org/10.1016/j.jallcom.2013.08.123 en_US
dc.description.abstract In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB2X4 ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pressure dependence of the theoretical cation–anion and vacancy-anion distances and compressibilities in HgGa2S4 are reported and discussed in comparison to other related ordered-vacancy compounds. Finally, the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa2S4 has been studied. Our calculations indicate that the low-pressure phase of HgGa2S4 becomes mechanically unstable above 13.8GPa. en_US
dc.language.iso en en_US
dc.publisher ELSEVIER en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.subject equations of state en_US
dc.subject elasticity en_US
dc.subject high pressure en_US
dc.subject X-rays diffractions en_US
dc.title Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure en_US
dc.type Article en_US


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