Noi tehnologii de nanostructurare a materialelor semiconductoare pentru dispositive electronice

POPA, Veaceslav; VOLCIUC, Olesea

dc.contributor.author	POPA, Veaceslav
dc.contributor.author	VOLCIUC, Olesea
dc.date.accessioned	2020-10-06T10:23:23Z
dc.date.available	2020-10-06T10:23:23Z
dc.date.issued	2008
dc.identifier.citation	POPA, Veaceslav, VOLCIUC, Olesea. Noi tehnologii de nanostructurare a materialelor semiconductoare pentru dispositive electronice. In: Revista de Ştiinţă, Inovare, Cultură şi Artă „Akademos”. 2008, nr. 4(11), pp. 84-85. ISSN 1857-0461.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/10458
dc.description.abstract	The article present the current level of performance in semiconductor technologies, in particular in those related to GaN processing. The advantages of GaN in comparison with classical semiconductors are evaluated by means of coefficient of merit. A novel maskless technology for GaN meso- and nanostructuring is demonstrated and possibilities for applications are discussed.	en_US
dc.language.iso	ro	en_US
dc.publisher	Academia de Științe a Moldovei	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	dispozitive semiconductoare	en_US
dc.subject	nanostructuri	en_US
dc.subject	nitrură de galiu	en_US
dc.subject	optoelectronică	en_US
dc.subject	electronică de putere	en_US
dc.title	Noi tehnologii de nanostructurare a materialelor semiconductoare pentru dispositive electronice	en_US
dc.type	Article	en_US