Browsing 2019 by Author "RAEVSCHI, S."

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  • Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films 
    POTLOG, T.; LUNGU, I.; RAEVSCHI, S.; BOTNARIUC, V.; ROBU, S.; WORASAWAT, S.; MIMURA, H. (Tehnica UTM, 2019)
    Al-doped ZnO thin films have been prepared by spray pyrolysis, which facilitates the incorporation of a higher percentage of dopant atoms. The vacuum thermally annealed at 420 °C temperature thin films have been characterized ...
  • Exploitation of Ultra-porous Aerogalnite for Microwave Electromagnetic Interference Shielding 
    ALDRIGO, M.; DRAGOMAN, M.; BRANISTE, T.; IORDANESCU, S.; RAEVSCHI, S.; SHREE, S.; ADELUNG, R.; TIGINYANU, I. (Tehnica UTM, 2019)
    In this paper, we present the electromagnetic interference shielding properties of an ultra-porous and ultra-light GaN-based nanomaterial, which we will refer to with aeroGaN. The importance of the so-called X-band (8.2-12.4 ...
  • Growth of p-GaN on Silicon Substrates with ZnO Buffer Layers 
    RAEVSCHI, S.; GORCEAC, L.; BOTNARIUC, V.; BRANISTE, T. (Tehnica UTM, 2019)
    GaN layers on Silicon with ZnO intermediate layer were synthesized by using the HVPE (Hydride Vapor Phase Epitaxy) method. ZnO layers were deposited from solutions of zinc compounds in ethanol or water in two steps. At the ...
  • The Influence of Semiconductor Nanoparticles upon the Activity of Mesenchymal Stem Cells 
    BRANISTE, T.; COBZAC, V.; ABABII, P.; PLESCO, I.; RAEVSCHI, S.; DIDENCU, A.; MANIUC, M.; NACU, V.; ABABII, I.; TIGINYANU, I. (Tehnica UTM, 2019)
    In this paper, we report on the viability and proliferation of mesenchymal stem cells after exposure to different types of semiconductor nanoparticles.
  • ZnO Nanometric Layers Used in Photovoltaic Cells 
    BOTNARIUC, V.; GORCEAC, L.; COVAL, A.; CINIC, B.; GAUGAS, P.; CHETRUS, P.; LUNGU, I.; RAEVSCHI, S. (Tehnica UTM, 2019)
    The ZnO thin layers were grown on glass, InP and pInP-nCdS substrates from zinc acetate dissolved in water-acetic acid-methanol solution having a molarity of 0.2 M by using the spray method in the argon flow in the temperature ...

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