IRTUM – Institutional Repository of the Technical University of Moldova

Characterisation of Silicon Nanolayers Deposited by Plasma Enhanced Chemical Vapor Deposition on 3-D ZnO Templates for Hollow Silicon Microstructures

Show simple item record

dc.contributor.author HÖLKEN, I.
dc.contributor.author SCHRÖDER, S.
dc.contributor.author ADELUNG, R.
dc.date.accessioned 2020-05-13T09:09:40Z
dc.date.available 2020-05-13T09:09:40Z
dc.date.issued 2015
dc.identifier.citation HÖLKEN, I., SCHRÖDER, S., ADELUNG, R. Characterisation of Silicon Nanolayers Deposited by Plasma Enhanced Chemical Vapor Deposition on 3-D ZnO Templates for Hollow Silicon Microstructures. In: ICNMBE: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 3rd intern. conf., Sept. 23-26 : Program & Abstract Book , 2015. Chişinău, 2015, p. 56. en_US
dc.identifier.uri https://doi.org/10.1007/978-981-287-736-9_7
dc.identifier.uri http://repository.utm.md/handle/5014/8164
dc.description Access full text - https://doi.org/10.1007/978-981-287-736-9_7 en_US
dc.description.abstract Hollow inorganic microstructures have gained much interest in nowadays research fields as they offer unique properties (high specific area, thermal conductivity or density) when compared to their bulk equivalents 1. On the other hand, for many applications, e.g. as anode material in lithium ion batteries 2, crystalline silicon microstructures (c-Si) would be of great interest. The development of thin hollow Si microparticles based on t- ZnO would therefore offer a new class of Si structures which are of special interest as they combine suitable physico-chemical properties with high porosity caused by their special morphology. One approach for the realization of these Si microstructures includes the usage of plasma enhanced chemical vapor deposition based on argon diluted silane source gases as it provides the opportunity to fabricate homogeneous nanolayers at relatively low temperatures. In order to obtain the desired morphology combined with an adequate deposition rate, in this work the process was optimized by parameter variations and subsequent investigations of the films by Raman spectroscopy, scanning electron microscopy and profilometry. First experiments for the deposition of Si onto t-ZnO were implemented and promising results were obtained. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject aerographite en_US
dc.subject templates en_US
dc.subject nanolayers en_US
dc.subject microstructures en_US
dc.title Characterisation of Silicon Nanolayers Deposited by Plasma Enhanced Chemical Vapor Deposition on 3-D ZnO Templates for Hollow Silicon Microstructures en_US
dc.type Article en_US


Files in this item

The following license files are associated with this item:

This item appears in the following Collection(s)

Show simple item record

Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

Search DSpace


Browse

My Account