Band Gap Size Dependence of Topological Insulator Bi2Te3 Nanotube

BEJENARI, Igor; KANTSER, Valeriu

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dc.contributor.author	BEJENARI, Igor
dc.contributor.author	KANTSER, Valeriu
dc.date.accessioned	2019-11-06T15:02:54Z
dc.date.available	2019-11-06T15:02:54Z
dc.date.issued	2011
dc.identifier.citation	BEJENARI, Igor, KANTSER, Valeriu. Band Gap Size Dependence of Topological Insulator Bi2Te3 Nanotube. In: Microelectronics and Computer Science: proc. of the 7th intern. Conf., September 22-24, 2011. Chişinău, 2011, vol. 1, pp. 129-132. ISBN 978-9975-45-174-1.	en_US
dc.identifier.isbn	978-9975-45-174-1
dc.identifier.uri	http://repository.utm.md/handle/5014/6272
dc.description.abstract	We study the electronic structure of a cylindrical nanotube made of a topological insulator Bi2Te3. The calculation was made in the framework of the kp theory near the Γ point of the surface Brilloiun zone. A band gap size dependence of the topological insulator nanotube was studied. A comparative analysis of the topological insulator direct band gap of Bi2Te3 and Bi2Se3 nanowires as a function of radius was done. Due to high surface-to volume ratio, a variation of nanotube geometrical sizes provides decreasing of the topological insulator band gap in 60 times compared to the corresponding bulk value. The size dependence of topological insulator nanotube band gap is mach stronger than that for the topological insulator nanowires.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	nanowires	en_US
dc.subject	nanotubes	en_US
dc.subject	surface states	en_US
dc.subject	topological insulators	en_US
dc.title	Band Gap Size Dependence of Topological Insulator Bi2Te3 Nanotube	en_US
dc.type	Article	en_US