The Radiation Effects on Structural Defects and Reliability of High-k MOS Gate Dielectrics

SHISHIYANU, Sergiu T.

Home
→
Facultatea Calculatoare, Informatică şi Microelectronică
→
Conferinţe
→
Conferinţa "Microelectronics and Computer Science"
→
2011
→
View Item

dc.contributor.author	SHISHIYANU, Sergiu T.
dc.date.accessioned	2019-11-05T14:42:12Z
dc.date.available	2019-11-05T14:42:12Z
dc.date.issued	2011
dc.identifier.citation	SHISHIYANU, Sergiu T. The Radiation Effects on Structural Defects and Reliability of High-k MOS Gate Dielectrics. In: Microelectronics and Computer Science: proc. of the 7th intern. Conf., September 22-24, 2011. Chişinău, 2011, vol. 1, pp. 46-49. ISBN 978-9975-45-174-1.	en_US
dc.identifier.isbn	978-9975-45-174-1
dc.identifier.uri	http://repository.utm.md/handle/5014/6145
dc.description.abstract	The effects of γ – irradiation on the physical and electrical properties of ZrO2 and HfO2 based high-k MOS structures were studied. The doses of γ –irradiation applied have been up to 80 Gray. The C-Vcharacteristics seeing as the flat-band shift when exposed to γ – irradiation showed high reliability of the structures. Raman scattering spectra of the ZrO2 thin films grown by RF magnetron sputtering on silicon substrate have been investigated. The impact of γ –irradiation doses on the ZrO2 thin films Raman spectra was analyzed. The intensity of the Raman signal originating from monoclinic ZrO2 is found to decrease with increasing gamma radiation.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	dielectrics	en_US
dc.title	The Radiation Effects on Structural Defects and Reliability of High-k MOS Gate Dielectrics	en_US
dc.type	Article	en_US