BARANOV, Simion; CINIC, Boris; ENACHI, Mihail; GORCEAC, Leonid; SUMAN, Victor
(Technical University of Moldova, 2011)
It is a report about an epitaxial GaAs relief layer with 3 μ of thickness growth in Ga –AsCl3 – H2 system on n-GaAs (n=2x1018cm-3) substrate with multiple crystallization centers. Crystalline lattice on substrate surface ...