Contact resistance and mechanical property measurements for the Ge2Sb2Te5 thin films

YAKUBOV, A.; SHERCHENKOV, A.; LAZARENKO, P.; BDIKIN, I.; BABICH, A.; TEREKHOV, D.

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dc.contributor.author	YAKUBOV, A.
dc.contributor.author	SHERCHENKOV, A.
dc.contributor.author	LAZARENKO, P.
dc.contributor.author	BDIKIN, I.
dc.contributor.author	BABICH, A.
dc.contributor.author	TEREKHOV, D.
dc.date.accessioned	2019-11-02T12:47:06Z
dc.date.available	2019-11-02T12:47:06Z
dc.date.issued	2019
dc.identifier.citation	YAKUBOV, A., SHERCHENKOV, A., LAZARENKO, P. et al. Contact resistance and mechanical property measurements for the Ge2Sb2Te5 thin films. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 31.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/5914
dc.description	Abstract	en_US
dc.description.abstract	Currently, Ge2Sb2Te5 (GST225) is widely investigated as material for non-volatile phase change memory. However, for the successful implementation of the multi-layered memory cell, it is necessary to understand peculiarities of interaction between GST225 and adjacent layers. In this regard, in the present work the contact resistances of the different contact pads to the GST225 thin films and mechanical properties of the GST225 films on the different sublayers were investigated.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	Ge2Sb2Te5	en_US
dc.subject	thin films	en_US
dc.subject	contact resistances	en_US
dc.title	Contact resistance and mechanical property measurements for the Ge2Sb2Te5 thin films	en_US
dc.type	Article	en_US