Contact resistance and mechanical property measurements for the Ge2Sb2Te5 thin films

Abstract

Currently, Ge2Sb2Te5 (GST225) is widely investigated as material for non-volatile phase change memory. However, for the successful implementation of the multi-layered memory cell, it is necessary to understand peculiarities of interaction between GST225 and adjacent layers. In this regard, in the present work the contact resistances of the different contact pads to the GST225 thin films and mechanical properties of the GST225 films on the different sublayers were investigated.