Measuring approach for semiconductor nanostructured gas sensors parameters

VERJBITKI, Valeriu; RAILEAN, Serghei; LUPAN, Oleg

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dc.contributor.author	VERJBITKI, Valeriu
dc.contributor.author	RAILEAN, Serghei
dc.contributor.author	LUPAN, Oleg
dc.date.accessioned	2019-10-31T12:46:53Z
dc.date.available	2019-10-31T12:46:53Z
dc.date.issued	2019
dc.identifier.citation	VERJBITKI, Valeriu, RAILEAN, Serghei, LUPAN, Oleg. Measuring approach for semiconductor nanostructured gas sensors parameters. In: Electronics, Communications and Computing: extended abstracts of the 10th Intern. Conf.: the 55th anniversary of Technical University of Moldova, Chişinău, October 23-26, 2019. Chişinău, 2019, p.65. ISBN 978-9975-108-84-3.	en_US
dc.identifier.isbn	978-9975-108-84-3
dc.identifier.uri	http://repository.utm.md/handle/5014/5781
dc.description	Abstract	en_US
dc.description.abstract	The development of new technologies for extracting and testing the parameters of nanostructures based on semiconductor oxides required the development of special instruments for measuring the parameters of such structures [1], in particular, measuring the temperature dependences of their electrical resistances. The small size of the nanostructures determines the restrictions imposed on the permissible values of currents, voltages, and powers that can be applied to such nanostructures.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	nanostructured semiconductor oxides	en_US
dc.subject	gas sensors	en_US
dc.subject	gas concentration	en_US
dc.title	Measuring approach for semiconductor nanostructured gas sensors parameters	en_US
dc.type	Article	en_US