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Photoconductivity relaxation in nanostructured InP
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| dc.contributor.author | POSTOLACHE, Vitalie | |
| dc.contributor.author | MONAICO, Eduard | |
| dc.contributor.author | BORODIN, Eugeniu | |
| dc.contributor.author | LUPAN, Oleg | |
| dc.contributor.author | URSAKI, Veaceslav | |
| dc.contributor.author | ADELUNG, Rainer | |
| dc.contributor.author | NIELSH, Kornelius | |
| dc.contributor.author | TIGINYANU, Ion | |
| dc.date.accessioned | 2019-10-21T12:52:14Z | |
| dc.date.available | 2019-10-21T12:52:14Z | |
| dc.date.issued | 2014 | |
| dc.identifier.citation | POSTOLACHE, Vitalie, MONAICO, Eduard, BORODIN, Eugeniu, LUPAN, Oleg, URSAKI, Veaceslav, ADELUNG, Rainer, NIELSH, Kornelius, TIGINYANU, Ion. Photoconductivity relaxation in nanostructured InP. In: Microelectronics and Computer Science: proc. of the 8th intern. conf., October 22-25, 2014. Chişinău, 2014, pp. 94-97. ISBN 978-9975-45-329-5. | en_US |
| dc.identifier.isbn | 978-9975-45-329-5 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/4948 | |
| dc.description.abstract | We show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures produced by anodization of InP substrates can be controlled through the control of their morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Tehnica UTM | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | porous InP | en_US |
| dc.subject | anodization | en_US |
| dc.subject | ultrathin walls | en_US |
| dc.subject | photoconductivity decay | en_US |
| dc.title | Photoconductivity relaxation in nanostructured InP | en_US |
| dc.type | Article | en_US |
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