Abstract:
In this work the experimental investigation of the resistive transitions broadening for magnesium diboride films and their microstructure is reported. The MgB2 films were prepared by dc-magnetron sputtering. To explore the microstructure of the films AFM and SAM was performed. The results show a TAFF caused broadening in the resistive transitions at several applied magnetic fields which may result from the microstructure of the films.