Abstract:
The photoluminescence at 77K of ZnS and ZnS:Al single crystals annealed in the Pb, Pb+0,2wt% PbCl2, and Bi+1,5•10-3wt% Al melts was investigated. It is shown that during the annealing process in the near the surface region of the crystal a layer or a new phase inclusions could be formed near the ZnS lattice distortions. The green radiation with the maximum close to 530…540nm in the PL spectra of ZnS:Al crystals annealed in Bi or Pb containing melts is stipulated by aluminum presence in the ZnS crystals.