The capture and recombination levels energetic diagram in GaSe (Cu) stratified single crystals

Abstract

By studying PL spectra, as well photonductivity kinetics and spectral dependences, for different excitation (photon) energies in temperature range 78 K up to ~420 K, energies of localized states due to both Cu and noncontrollable impurities are determined. From comparative annalyse of temperature dependence of electrical conductivity and photoconductivity for undoped and Cu-doped films, the activation energy of acceptor levels was determined as 0.058 and 0.025 eV for GaSe(Cu) films.