Metal– semiconductor and HTSC – semiconductor contacts for diode detectors

Abstract

The numerical modeling of the electrical potential distribution and current passing in the contacts of the high temperature superconductor with semiconductor InSb had been made. There were analyzed the possibilities to create the diode detectors (DD) based on these contacts and working at liquid nitrogen temperature 77.4 K. The comparison with existent literature data shows the proposed DD can be 10÷100 times better. Therefore these DD are perspective for cryogenic electronics and there is an actual problem to elaborate them.