Arsenic (III) oxide crystal obtained from technological waste: photoluminescence

Abstract

Arsenic (III) oxide was obtained from vapor stream at processing technological waste in manufacturing of the gallium arsenide epitaxial structure. It has a cubic crystal structure, elementary cell a=11.05(4)Ǻ, Fd3m space group. The photoluminescence spectra of the arsenic oxide contains a band with the maximum 2.69 eV that doesn’t depend on temperature in the interval 77-300 K. The width of the band is 0.75 eV. The intensity of illumination with energies lower than 2.32 eV at 77 K is higher. Perhaps it can be utilized in opto electronic device designing.