Electrical properties of CuInSe2 crystals obtained by gas transport method

Abstract

The ternary compounds of I-III-VI2 group and their solid solutions recently became one of the most promising materials for the fabrication of high efficiency solar cells. The unique physical properties and relatively low cost of the material allow to use CuIn(Ga)Se2 thin films in the low cost large area photo-converters with the efficiency reaching 17%. The further increase of the photo-converters efficiency is stipulated by the fabrication of the epitaxial CuIn(Ga)Se2 layers with the minimum concentration of the native lattice defects.