Autler–townes effect on the excitons and biexcitons in semiconductors

Abstract

The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M–band of luminescence and the test pulse in the exciton range of spectrum is investigated. The well pronounced Autler–Townes effect occurs at the exciton range. The position of the absorption peaks is determined by the amplitude and frequency of pump pulse.