Abstract:
We had been theoretically studied the acoustic phonon spectra and group velocities of the phonons in the rectangular GaN nanowire with clamped outer surfaces, covered with elastically dissimilar barriers. The elastic properties of acoustically mismatched barrier influence dramatically on the phonon spectrum. The barriers with lower sound velocity (“acoustically slow” barriers) are “compressing” the phonon energy spectrum and reducing strongly the group velocities of the phonons. The barriers with higher sound velocity (“acoustically fast barriers”) are demonstrated the opposite influence. The reason for such strong influence of barrier had been established. It is consisted of the re-distribution of the elastic deformations in heterowire. It is concluded that these effects can be used in phonon engineering.