Peculairities of impurity influience in weakly degenerated systems

Abstract

It is experimentally found that small additions to bismuth of elements of the IV and VI groups lead to such change in concentration of free charge carriers that it is less than one electron per atom and considerably depends on nature of the latter. Composition of ternary alloys of bismuth with elements of the IV and VI groups with the electric properties close to those of pure bismuth was successful at the liquid nitrogen temperature.