Chalcogenide semiconductors as gas sensors

dc.contributor.author	TSIULYANU, Dumitru
dc.date.accessioned	2019-10-16T13:01:33Z
dc.date.available	2019-10-16T13:01:33Z
dc.date.issued	2005
dc.identifier.citation	TSIULYANU, Alexantru. Effect of contacts and thickness on the NO2 sensing properties of tellurium based films. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 145-148. ISBN 9975-66-038-X.	en_US
dc.identifier.isbn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/4755
dc.description.abstract	A brief survey of experimental results to gas sensing with chalcogenide semiconductor based devices is given. It is pointed out that physical phenomena such as electrical conductivity can be coupled to chemical reactions on the surface or within the sensing material. Sensors based on tellurium alloys for detection of nitrogen dioxide, ammonia or carbon oxide are described in some detail. A general discussion is given about the fundamental mechanisms of gas sensing with these materials taking into consideration their special chemistry and defect states.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gas sensors	en_US
dc.subject	chalcogenide semiconductors	en_US
dc.subject	semiconductors	en_US
dc.title	Chalcogenide semiconductors as gas sensors	en_US
dc.type	Article	en_US