Effect of rapid photothermal processing on the C-V characteristics of anodic SiO2 films

Abstract

The effect of rapid photothermal processing (RPP) in nitrogen on anodic SiO2 for high quality oxide preparation in terms of gate dielectrics in thin film transistors is reported. Samples prepared by anodic oxidation of silicon in different pre-oxidation and oxidation conditions, and RPP have been used for characterization of SiO2 thin film devices.