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Exciton Luminescence in In0.3Ga0.7As/GaAs Quantum Well Heterostructures

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dc.contributor.author KAPON, Eli
dc.contributor.author MEREUŢA, Alexandru
dc.contributor.author DOROGAN, Andrei
dc.contributor.author DRAGUTAN, Nicolae
dc.contributor.author VIERU, Tatiana
dc.date.accessioned 2019-10-15T07:35:50Z
dc.date.available 2019-10-15T07:35:50Z
dc.date.issued 2011
dc.identifier.citation KAPON, Eli, MEREUŢA, Alexandru, DOROGAN, Andrei et al. Exciton Luminescence in In0.3Ga0.7As/GaAs Quantum Well Heterostructures. In: ICNBME-2011. International conference on Nanotechnologies and Biomedical Engineering. German-moldovan workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the intern. conf., July 7-8, 2011. Chişinău, 2011, pp. 83-85. ISBN 978-9975-66-239-0. en_US
dc.identifier.isbn 978-9975-66-239-0
dc.identifier.uri http://repository.utm.md/handle/5014/4675
dc.description.abstract Radiation maxima were observed in photoluminescence spectra of GaAs/ In0.3 Ga0.7As/ GaAs in case of 632.8nm and 532nm He-Ne laser excitation conditioned by the recombination from ground (e1-hh1, e1-lh1) and excited (e2-hh2, e2-lh2) states of polarionic excitons in quantum wells. The doublet character of e1-hh1, e1-lh1 transitions can be explained by the interaction of excitons in quantum wells. Radiation maxima are revealed in the region of 1.5eV energy conditioned by recombination transitions Eb-hh1, Eb-lh1of the GaAs buffer layer. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject quantum wells en_US
dc.subject heterostructures en_US
dc.subject excitons en_US
dc.subject luminescence en_US
dc.title Exciton Luminescence in In0.3Ga0.7As/GaAs Quantum Well Heterostructures en_US
dc.type Article en_US


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