Photoelectric Properties of Nanostuctured Layers

Abstract

The paper is focused to study the photosensitivity modulation in crystalline and nanostructured materials. The photoresistor with modulated photosensitivity on the basis of III-V compounds was elaborated. In the results of investigation the photoresistor characteristics and the physical model to modulate photosensitivity are presented. Nanostructured films were formed by selective photo-assisted electro-chemical etching of the n- GaP and n-InP substrate and were separated from it by wet chemical etching. Researches of photoelectric characteristics of nanostructured films are presented, modeled and discussed. Photoelectric properties of nanostructured layers make it possible to use such structures for the manufacture of optical detectors and switches.