High performance ZnSe-based ultraviolet photodetectors with Cr/Au, Ni/Au and hybrid Ag-nanowire contacts

Abstract

Most commercial UV-photodetectors are based on Si or GaAs and the intense UV radiation induces aging effects that leads to their degradation. To solve this issue, the bulk high-resistivity ZnSe could be used for fabrication of UV photodetectors with metal-semiconductor-metal structure, as we shown recently.