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Procedures for obtaining of semiconductors based on GaN:Mg

Procedures for obtaining of semiconductors based on GaN:Mg

RUSU, Emil; URSACHI, Veaceslav; RAEVSCHI, Semion; MORARI, Vadim
URI: http://repository.utm.md/handle/5014/26396
Date: 2020

Abstract:

The process according to the invention consists in obtaining GaN nanoparticles and nanoparticles with pconductivity by means of chemical reactions of a chemical compound used as the source of gallium atoms and magnesium acetate Mg (CH3COO)2, or acetate tetrahydrate of magnesium (CH3COO)2 * 4H2O – as a source of magnesium atoms in the hydrothermal process, at the same time the concentration of the doping element being of (0.4-2.0)% wt.

Description:

 
Patent application: No.4618, 2019
 
Class no. 5 - Industrial and laboratory equipments
 

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  • 2020
    Proceedings of the 12 th Edition of European Exhibition of Creativity and Innovation, Romania
Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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