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Light Induced Modification of the Refractive Index of Sb2Se3:Sn Thin Films

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dc.contributor.author IOVU, M. A.
dc.contributor.author HAREA, D. V.
dc.contributor.author IASENIUC, O.
dc.contributor.author COLOMEICO, E. P.
dc.contributor.author MESHALKIN, A.
dc.contributor.author IOVU, M. S.
dc.date.accessioned 2024-01-09T07:44:34Z
dc.date.available 2024-01-09T07:44:34Z
dc.date.issued 2009
dc.identifier.citation IOVU et al. Light Induced Modification of the Refractive Index of Sb2Se3:Sn Thin Films. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 103-106. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1). en_US
dc.identifier.isbn 978-9975-45-045-4
dc.identifier.isbn 978-9975-45-122-2
dc.identifier.uri http://repository.utm.md/handle/5014/25733
dc.description.abstract The optical properties of chalcogenide glasses present a great scientific interest for the establishment of the general legitimacy of interaction of the optical irradiation with the amorphous solids, as well as a practical interest. The effect of light-induced photostructural transformations in amorphous chalcogenides films have been initiated many applications of amorphous material in photonics and optoelectronics, especially as inorganic photo-resists for sub-micron technology. The optical parameters of amorphous Sb2Se3 and Sb2Se3:Snx (x=0.01, 0.5, 10 at. Sn %) prepared by vacuum evaporation on glass substrates was determined from transmission spectra. The band gap was found to be Eg=1.30 eV for amorphous Sb2Se3 and decrease with increasing of tin concentration up to Eg=1.0 eV for Sb2Se3:Sn10.0. For determination of the refractive index the approximation method proposed by Valeev was used. The maximum modifications of the refractive index under the light irradiation Δn ~ 0.20 occur for the composition Sb2Se3:Sn0.01. That allows us to conclude that doping of amorphous Sb2Se3 films with small concentrations of tin initiate the photostructural transformations under the light irradiation, and make these materials suitable for registration of optical and holographic information. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.relation.ispartof Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject amorphous films en_US
dc.subject optical absorption en_US
dc.subject refractive index en_US
dc.subject photoinduced phenomena en_US
dc.subject thin films en_US
dc.title Light Induced Modification of the Refractive Index of Sb2Se3:Sn Thin Films en_US
dc.type Article en_US


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