Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K

ARAMĂ, E.; GHEORGHIŢĂ, E.; PÎNTEA, V.

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dc.contributor.author	ARAMĂ, E.
dc.contributor.author	GHEORGHIŢĂ, E.
dc.contributor.author	PÎNTEA, V.
dc.date.accessioned	2024-01-05T07:41:00Z
dc.date.available	2024-01-05T07:41:00Z
dc.date.issued	2009
dc.identifier.citation	ARAMĂ, E., GHEORGHIŢĂ, E., PÎNTEA, V. Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K. In: Microelectronics and Computer Science: proc. 6th International Conference, 1-3 Oct. 2009, Chişinău, Republica Moldova, vol. 1, 2009, pp. 51-52. ISBN 978-9975-45-045-4. ISBN 978-9975-45-122-2 (vol. 1).	en_US
dc.identifier.isbn	978-9975-45-045-4
dc.identifier.isbn	978-9975-45-122-2
dc.identifier.uri	http://repository.utm.md/handle/5014/25717
dc.description.abstract	In this article on the describe structure spectrum of radiation polities of 2 4 ZnIn S at 80 K relative thickness of plaque. Is proposed the optical transition energy for recombination holder with unbalanced load levels specifically determined experimentally (0,11 and 0,25 eV de la Ev). On the basis of the results are interpreted.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.relation.ispartof	Proceeding of the 6th International Conference on "Microelectronics and Computer Science", oct.1-3, 2009, Chişinău, Moldova
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	monocrystals	en_US
dc.subject	semiconductors	en_US
dc.subject	optoelectronics elements	en_US
dc.subject	radiation polities	en_US
dc.subject	sensors	en_US
dc.title	Structura spectrelor de iradiere a politipului 2 4 ZnIn S la 80 K	en_US
dc.type	Article	en_US