Electrical behavior of the CdTe heterojunction cells fabricated on polyimide substrates

Abstract

Hot-wall technique has been used for preparation of CdTe heterojunction cells on the polyimide substrates covered with ITO layer. Carrier transport mechanisms of the heterojunction cells are briefly discussed. It has been established that tuneling recombination current flows through states near or at the interface with a thermal activation energy 0,34 eV; 0,33 eV; 0, 34 eV; for applied bias voltages 0,1V; 0,2 V and 0,3 V; respectively. The reverse current is limited by the carrier generation process.