IRTUM – Institutional Repository of the Technical University of Moldova
Ground and Excited States of Excitons in GaSe Single Crystals
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | CRISTEA, Ecaterina | |
| dc.contributor.author | STAMOV, Ivan | |
| dc.contributor.author | ZALAMAI, Victor | |
| dc.date.accessioned | 2023-11-03T07:25:27Z | |
| dc.date.available | 2023-11-03T07:25:27Z | |
| dc.date.issued | 2023 | |
| dc.identifier.citation | CRISTEA, Ecaterina, STAMOV, Ivan, ZALAMAI, Victor. Ground and Excited States of Excitons in GaSe Single Crystals. In: 6th International Conference on Nanotechnologies and Biomedical Engineering: proc. of ICNBME-2023, 20–23, 2023, Chisinau, vol. 1: Nanotechnologies and Nano-biomaterials for Applications in Medicine, 2023, p. 166-173. ISBN 978-3-031-42774-9. e-ISBN 978-3-031-42775-6. | en_US |
| dc.identifier.isbn | 978-3-031-42774-9 | |
| dc.identifier.isbn | 978-3-031-42775-6 | |
| dc.identifier.uri | https://doi.org/10.1007/978-3-031-42775-6_18 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/24622 | |
| dc.description | Acces full text - https://doi.org/10.1007/978-3-031-42775-6_18 | en_US |
| dc.description.abstract | In this work photoluminescence, reflection and absorption spectra of GaSe single crystals were studied in a wide temperature range (10 – 300 K). The presence of series of excitonic levels in the region E > Eg was shown. At excitation by 448 nm laser of GaSe crystal electrons were resonantly excited from V1(Γ1) band to C1(Γ6) and C2(Γ5) bands. The luminescence from excitonic levels (nA = 1, 2 … 5) of conduction band C1(Γ6) to valence band V1(Γ1) was observed. Recombination from excitonic level of C1(Γ6) band to V2 and V3 bands (maxima nB = 1–2.1751 eV and nB = 2–2.2222 eV) and to V4 and V5 bands (maxima nC = 1 – 2.311 eV and nC = 2–2.350 eV) was observed. Luminescence maxima nD = 1 (2.399 eV) and nD = 2 (2.434 eV) attributed to transitions between C1 – V6, V7 bands and E3 maximum caused by recombination C2 – V1 were found out. A model of energy bands responsible for observed transitions was suggested. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Springer Nature Switzerland | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | gallium selenide | en_US |
| dc.subject | excitonic states | en_US |
| dc.subject | band structures | en_US |
| dc.subject | photoluminescence | en_US |
| dc.subject | wavelength modulation reflection spectra | en_US |
| dc.title | Ground and Excited States of Excitons in GaSe Single Crystals | en_US |
| dc.type | Article | en_US |
Files in this item
The following license files are associated with this item:
This item appears in the following Collection(s)
-
2023
6th International Conference on Nanotechnologies and Biomedical Engineering, September 20–23, 2023, Chisinau, Moldova
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States