Devices of a Me-crystal-Me structure and the active region of the anisotropic semiconductor crystal Ag3AsS3 were elaborated. The device possesses nonlinear optical characteristics of an N-type shape.
Au fost elaborate dispozitive cu structura Me-cristal-Me si regiunea activa a cristalului semiconductor anizotrop de tip Ag3AsS3. Dispozitivele poseda caracteristici optice nelineare de tip-N.