Enhanced efficiency of p-GaN/n-ZnO light-emitting diodes by using NiO and ZnSe interlayers

Abstract

We report the results from numerical simulations of p-GaN/n-ZnO light-emitting diodes (LEDs) with different architectures. p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED structures have been examinated using one-dimensional (1D) Schrödinger-Poisson solver simulator.