Browsing by Author "YILMAZOGLU, Oktay"

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  • SIRKELI, Vadim P.; YILMAZOGLU, Oktay; KÜPPERS, Franko; HARTNAGEL, L. (Tehnica UTM, 2014)
    We report on numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes with p-NiO interlayer, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. ...
  • SIRKELI, Vadim; YILMAZOGLU, Oktay; AL-DAFFAIE, S.; OPREA, I.; ONG, Duu Sheng; KUPPERS, Franko; HARTNAGEL, Hans Ludwig (Institutul de Fizică Aplicată al AŞM, 2016)
    In the past decade the AlInGaN-based light-emitting diodes (LEDs) have attracted attentions of most researchers as promising candidates to replace conventional lamps in lighting applications including general illuminations, ...
  • SIRKELI, Vadim P.; YILMAZOGLU, Oktay; AL-DAFFAIE, Shihab; OPREA, Ion; ONG, Duu Sheng; KÜPPERS, Franko; HARTNAGEL, Hans L. (IOP Publishing, 2016)
    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that ...
  • SIRKELI, Vadim; YILMAZOGLU, Oktay; HAJO, Ahid; NEDEOGLO, Natalia; NEDEOGLO, Dmitrii; PREU, Sascha; KÜPPERS, Franko; HARTNAGEL, Hans (Technical University of Moldova, 2024)
    Most commercial UV-photodetectors are based on Si or GaAs and the intense UV radiation induces aging effects that leads to their degradation. To solve this issue, the bulk high-resistivity ZnSe could be used for fabrication ...
  • SIRKELI, Vadim P.; NEDEOGLO, Natalia D.; NEDEOGLO, Dmitrii D.; YILMAZOGLU, Oktay; HAJO, Ahid S.; PREU, Sascha; KÜPPERS, Franko; HARTNAGEL, Hans L. (Tehnica UTM, 2018)
    This We report on high-responsivity, fast nearultraviolet avalanche photodetectors based on bulk ZnSe employing a metal-semiconductor-metal structure. A very high responsivity of 2.42 A/W and 4.44 A/W at 20 V bias voltage ...
  • SIRKELI, Vadim P.; YILMAZOGLU, Oktay; AL-DAFFAIE, Shihab; OPREA, Ion; ONG, Duu Sheng; KÜPPERS, Franko; HARTNAGEL, Hans L. (International Society for Optics and Photonics, 2017)
    II-VI compounds are promising materials for the fabrication of room-temperature terahertz devices due to their beneficial properties like as type-I conduction band alignment, high breakdown field strength (~331 kV/cm for ...

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