Browsing by Author "DANILA, M."

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  • ESINENCO, D.; SIRBU, L.; VODA, I.; GHIMPU, L.; MULLER, R.; VOICU, R.; DANILA, M.; LECA, A.; DASCALU, T.; TIGINYANU, I. M.; URSAKI, V. (Technical University of Moldova, 2011)
    We demonstrate the fabrication of thin InP membranes with porous compact packed structure that have been cut during electrochemical etching in the same anodic process. Besides, we show the possibility of pore filling with ...
  • SIRBU, L.; VODA, I.; ESINENCO, D.; MULLER, R.; VOICU, R.; DANILA, M.; GHIMPU, L.; TIGINYANU, I. M.; URSAKI, V. (IEEE, 2011)
    We demonstrated the fabrication of complex nanostructured InP membranes with porous compact packed structure that have been cut during electrochemical etching in the same anodic process. The membranes were filled with ...
  • PURICA, M.; BUDIANU, E.; RUSU, E.; DANILA, M.; GAVRILA, R. (Elservier, 2002)
    Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C5H7O2)2 as Zn source. The deposited thin ZnO layers of ∼0.1 μm thickness on Si and InP semiconductor ...
  • SIRBU, L.; DANILA, M.; MULLER, R.; GHIMPU, L.; DOBLETBAEV, R.; DASCALU, T.; GRIGORE (SANDU), O.; SARUA, A.; URSAKI, V. (Technical University of Moldova, 2013)
    We developed a combination of technology for deposition contacts/wires upon nanoporous InP thin film structures and RF sputtering InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron ...
  • PURICA, M.; BUDIANU, E.; RUSU, E.; DANILA, M.; GAVRILA, R. (IEEE, 1998)
    Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C/sub 5/H/sub 7/O/sub 2/)/sub 2/ as Zn source. The deposited thin ZnO layers of /spl sim/0,1 /spl ...
  • SIRBU, L.; GUTUL, T.; TODOSICIUC, A.; DANILA, M.; MULLER, R.; SARUA, A.; WEBSTER, R.; TIGINYANU, I. M.; URSAKI, V. (Technical University of Moldova, 2013)
    InP nanodots with the diameter of 4−10 nm were synthesized using sol-gel method. The nanodot dimensions were obtained using TEM, and we found the d(111) spacing to be 0.328nm which agrees within 3% of the literature value. ...

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