Browsing by Subject "Schottky diodes"

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  • High Power Discrete Schottky Diodes Based 275-305 GHz Transceiver for FMCW-Rada 
    MORO-MELGAR, D.; COJOCARI, O.; OPREA, I.; HOEFLE, H.; RICKES, M. (IEEE, 2018)
    A heterodyne 275-305 GHz transceiver intended for frequency modulated continuous wave radar applications is presented here. A commercial E-band active multiplication chain is used to provide the required power and frequency ...
  • High Power High Efficiency 270-320 GHz Source Based on Discrete Schottky Diodes 
    MORO-MELGAR, D.; COJOCARI, O.; OPREA, I. (IEEE, 2018)
    A 300 GHz source based on discrete Schottky diodes technology is reported in this work. The high frequency part developed by ACST consists of two high power and high efficiency doublers, one at 135-160 GHz and a second one ...
  • High-Power MM-Wave Frequency Multipliers 
    COJOCARI, O.; MORO-MELGAR, D.; OPREA, I. (IEEE, 2019)
    A novel approach has been developed on monolithic integration of Schottky diodes with CVD diamond substrate for improved thermal dissipation. This allowed development of mmwave frequency multipliers with unmatched ...
  • High-Power MM-Wave Sources based on Schottky Diodes 
    COJOCARI, Oleg; MORO-MELGAR, Diego; OPREA, Ion; HOEFLE, Matthias; RICKES, Martin (IEEE, 2018)
    A novel approach has been developed at ACST for realization of high-power frequency multipliers in MM/SubMM-Wave range. This approach is based on discrete Schottky structures with monolithically-integrated diamond heatspreader. ...
  • Highly responsive planar millimeter wave zero-bias Schottky detector with impedance matched folded dipole antenna 
    HOEFLE, M.; HAEHNSEN, K.; OPREA, I.; COJOCARI, O.; PENIRSCHKE, A.; JAKOBY, R. (IEEE, 2013)
    A compact highly responsive planar zero-bias Schottky detector is proposed for uni-planar and low-cost fabrication. Various zero-bias Schottky diodes are investigated, in particular the optimization of impedance matching ...
  • Low noise 89 GHz detector module for MetOp-SG 
    HOEFLE, Matthias; COJOCARI, Oleg; SOBORNYTSKYY, Mykola; JANKOWSKI, Andrzej; OPREA, Ion; PENIRSCHKE, Andreas; JAKOBY, Rolf; DECOOPMAN, Thibaut; PERICHAUD, Marie-Genevieve; PIIRONEN, Petri (IEEE, 2015)
    Presented is an 89 GHz waveguide coupled direct detector based on low-barrier Schottky diodes. The design aims for signal-to-noise ratio (SNR) values above 35 dB within 6 dB input power dynamic, with significant white and ...
  • Metal– semiconductor and HTSC – semiconductor contacts for diode detectors 
    KERNER, Iacov (Technical University of Moldova, 2005)
    The numerical modeling of the electrical potential distribution and current passing in the contacts of the high temperature superconductor with semiconductor InSb had been made. There were analyzed the possibilities to ...
  • Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers 
    COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; MUTAMBA, K.; SAGLAM, M.; HARTNAGEL, H. L. (IEEE, 2004)
    Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements ...
  • Millimeter-wave receiver based on a folded dipole antenna and Schottky diode for maximum power transfer 
    MONTERO-de-PAZ, J.; UGARTE-MUÑOZ, E.; GARCIA-MUÑOZ, L. E .; SEGOVIA-VARGAS, D.; SCHOENHERR, D.; OPREA, I.; AMRHEIN, A.; COJOCARI, O.; HARTNAGEL, H. L. (IEEE, 2012)
    In this article a millimeter-wave (mm-wave) receiver based on a folded dipole antenna, zero bias Schottky diode and silicon (Si) lens is presented. The antenna is designed in such a way that its input impedance is equal ...
  • New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis 
    ARSENTIEV, I. N.; BOBYI, A. V.; BOLTOVETS, N. S.; IVANOV, V. N.; KONAKOVA, R. V.; KUDRYK, Y. Y.; LYTVYN, O. S.; MILENIN, V. V.; TARASOV, I. S.; BELYAEV, A. E.; RUSU, E. V. (IEEE, 2004)
    A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n/sup +/-InP substrates is considered. We studied surface morphology, boundary between phases in TiB/sub x/-n-InP ...
  • New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis 
    ARSENTIEV, I.; BOLTOVETS, N.; BOBYL, A.; IVANOV, V.; KONAKOVA, R.; KUDRYK, Ya.; LYTVYN, O.; MILENIN, V.; TARASOV, I.; BELYAEV, A.; RUSU, Emil (Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu", 2005)
    A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact ...
  • A novel system for systematic microwave noise and DC characterization of terahertz Schottky diodes 
    BIBER, S.; COJOCARI, O.; REHM, G.; MOTTET, B.; RODRIGUEZ-GIRONES, M.; SCHMIDT, L.-P.; HARTNAGEL, H. L. (IEEE, 2004)
    An automated system is developed to evaluate a large number Schottky diodes for terahertz applications with respect to their dc and noise characteristics using a highly sensitive noise measurement technique for one port ...
  • Operation of quasi-optical a THz detectors in heterodyne regime 
    COJOCARI, O.; MARTYANOV, M.; MORO-MELGAR, D.; SOBORNYTSKYY, N. (IEEE, 2017)
    In recent years Schottky-diode technologies gain influence in THz systems because of their large sensitivity, wide range, high power capability and room-temperature operation. Schottky diodes rectify the RF signal directly ...
  • Photodetectors and birefringence in ZnP2–С2h5 crystals 
    STAMOV, I. G.; SYRBU, N. N.; DOROGAN, A. V. (Elservier, 2013)
    The spectral dependences of refractive indexes no(n⊥), ne(n||) and Δn=no(n⊥)−ne(n||) were studied in ZnP2–C2h5 crystals. The intersection of no(n⊥) and ne(n||) was found for λ0=0.906μm. The crystal possesses positive ...
  • Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP 
    RUSU, E. V.; SLOBODCHIKOV, S. V.; SALIKHOV, H. M.; TURCU, M. (IEEE, 1998)
    The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H/sub 2/ atmosphere on these characteristics have been ...
  • Polarization sensors based on anisotropic crystals 
    SYRBU, N.; DOROGAN, A.; STAMOV, I.; DOROGAN, V. (Romanian Inventors Forum, 2016)
    The research presents the azimuthal dependence of optical absorption effects in anisotropic crystals ZnAs2 and the potential for any optical device sensitive to linearly polarized optical radiation, based on two Schottky ...
  • Process Control and Failure Analysis Implementation for THz Schottky-based components 
    ICHIZLI, V.; RODRÍGUEZ-GIRONÉS, M.; MARCHAND, L.; GARDEN, C.; COJOCARI, O.; MOTTET, B.; HARTNAGEL, H. L. (Elsevier, 2002)
    Schottky diodes and integrated circuits are most used devices for both frequency mixing and multiplying in THz range. Higher operational frequencies require of the devise dimensions. Devise dimensions in THz range are often ...
  • Quasi optical Schottky diode detectors for fast ultra-wideband detection 
    SOBORNYTSKYY, N.; LISAUSKAS, A.; WEICKHMANN, C.; JAKOBI, R.; SEMENOV, A.; HÜBERS, H.; MÜLLER, R.; HOEHL, A.; COJOCARI, O. (IEEE, 2013)
    We present ultra-wideband zero-bias Schottky diode detector modules with monolithically integrated log-spiral antenna. Detectors exhibit a broad-band response with a stronger roll-off above 800 GHz and the minimum ...
  • Quasi optical Schottky diode detectors for fast ultra-wideband detection 
    COJOCARI, O.; SOBORNYTSKYY, N.; WEICKHMANN, C.; JAKOBY, R.; SEMENOV, A.; HÜBERS, H.; MÜLLER, R.; HOEHL, A. (IEEE, 2016)
    We present ultra-wideband zero-bias Schottky diode detector modules with monolithically integrated log-spiral antenna. Detectors exhibit a broad-band response with a stronger roll-off above 800 GHz and the minimum ...
  • Quasi-vertical Schottky-structures for THZ-applications 
    COJOCARI, O.; SYDLO, C.; HARTNAGEL, H.-L.; TIGINYANU, I. M. (Technical University of Moldova, 2005)
    This paper presents the results of a systematical work on the improvement of high-frequency performance of quasi-vertical structures for THz-applications. Three versions of structure-design based on a quasi-vertical concept ...

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