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Porosification of narrow and wide band gap semiconductor compounds: comparative study of InAs, InP and ZnSe
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| dc.contributor.author | MONAICO, Eduard | |
| dc.contributor.author | TIGINYANU, I. M. | |
| dc.contributor.author | URSAKI, V. V. | |
| dc.contributor.author | COLIBABA, G. | |
| dc.contributor.author | NEDEOGLO, D. D. | |
| dc.contributor.author | COJOCARU, A. | |
| dc.contributor.author | FÖLL, H. | |
| dc.date.accessioned | 2019-12-05T14:52:53Z | |
| dc.date.available | 2019-12-05T14:52:53Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | MONAICO, Eduard, TIGINYANU, I. M., URSAKI, V. V. et al. Porosification of narrow and wide band gap semiconductor compounds: comparative study of InAs, InP and ZnSe. In: Telecommunications, Electronics and Informatics- ICTEI 2012: proc. of the 5th intern. conf., Technical University of Moldova, May 11-13, 2012. Chișinău, 2012, Vol. 1, pp. 240-245. ISBN 978-9975-45-082-9. | en_US |
| dc.identifier.isbn | 978-9975-45-082-9 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/7315 | |
| dc.description.abstract | A comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V compound (InP) and a wide-bandgap II-VI semiconductor (ZnSe) is performed. It was found that the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. Difficulties in controlling the mechanism of pore growth in InAs were evidenced. Both current-line-oriented pores and crystallographically oriented pores can be produced in InP, while only current-lineoriented pores can be obtained in ZnSe. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Technical University of Moldova | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | porous layers | en_US |
| dc.subject | anodization | en_US |
| dc.subject | current-line-oriented pores | en_US |
| dc.subject | crystallographically oriented pores | en_US |
| dc.subject | ionicity degree | en_US |
| dc.title | Porosification of narrow and wide band gap semiconductor compounds: comparative study of InAs, InP and ZnSe | en_US |
| dc.type | Article | en_US |
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