Temperature influence on In0,3Ga0,7As / GaAs nanostructures of VCSEL lasers with quantum wells

Abstract

Transitions hh,lh1-e1(1s), hh1,lh1-e2(1s), hh2,lh2 -e2(1s), hh3,lh3,-e3(1s) and the particularities conditioned by quantum dots (QD) produced on the boundaries of nanolayers and buffer layer had been revealed in reflection and transparency spectra of quantum wells (QW) of In0,3Ga0,7As/GaAs. The reflection and transparency contour lines had been calculated, as for the single oscillatory as for double oscillatory model. The oscillator’s force and the dumping factor for QW and QD transitions had been calculated. The radiative lifetime of exciton in QW and QD is the same for the studied structure τо = (2Г0 )-1 ≈2-10-12 , с = 5ps.