Preparation and properties of colloidal GaP nanoparticles

Abstract

Recent results regarding technological aspect of preparing high quality GaP nanoparticles for use in light emissive devices are presented in this work. The nanoparticles have been prepared by a colloidal low temperature method using a new precursor as source of gallium atom such as gallium acetylacetonat and temperature treatment in order to improve the quality of nano-suspension and to characterize their dimensions. Trioctilphosphine oxide (TOPO) was used to avoid coagulation and aggregation of nanoparticles. Photoluminescence and. X-ray diffraction and high resolution transmission microscopy (TEM) of the nanoparticles prepared under different conditions are investigated. We demonstrate that by using as a sources of gallium atoms of gallium acetylacetonate (Ga[CH3COOH=C(O-)CH3]3) uniform fraction of nanoparticles of about 8-10 nm in diameter are produces. These materials show a luminescence maximum at around 3.2 eV determined by quantum-confinement effects.