Nonvolatile resistance switching in monolayer transition metal dichalcogenides: an explanation

SAVA, F.; VELEA, A.; MIHAI, C. O.; BURUIANA, A. T.

Home
→
Facultatea Electronică şi Telecomunicaţii
→
Conferinţa "Amorphous and Nanostructured Chalcogenides"
→
2019
→
View Item

dc.contributor.author	SAVA, F.
dc.contributor.author	VELEA, A.
dc.contributor.author	MIHAI, C. O.
dc.contributor.author	BURUIANA, A. T.
dc.date.accessioned	2019-11-04T15:16:43Z
dc.date.available	2019-11-04T15:16:43Z
dc.date.issued	2019
dc.identifier.citation	SAVA, F., VELEA, A., MIHAI, C. O., BURUIANA, A. T. Nonvolatile resistance switching in monolayer transition metal dichalcogenides: an explanation. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 62-63.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/6028
dc.description	Abstract	en_US
dc.description.abstract	Recently, Ge et. al. [1] showed that in atomic sheets of transition metal (from the group VI B) dichalcogenides (TMD) (Fig. 1) (MoS2, MoSe2, WS2 and WSe2) nonvolatile resistance switching occurs. In order to understand this behaviour of mono-layer TMD, at these very intense electric fields (E = 1.43*109 V/m), we advance the hypothesis (and structural models) that the nonvolatile resistance switching might occur by two successive structural transformations due to local coordination changes of the transition metal and the chalcogen atoms.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	electric fields	en_US
dc.subject	nonvolatile resistance	en_US
dc.subject	structural transformations	en_US
dc.title	Nonvolatile resistance switching in monolayer transition metal dichalcogenides: an explanation	en_US
dc.type	Article	en_US